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Character of Interaction and Glass Formation in the TlAs2Se3Te–TlAs2Te3Se Sysytem

Imir Aliev1, Ceyran Ahmedova2, Ikram Aliev1, Esmira Kuli-Zade1
Affiliation: 
1 Institute of Catalysis and Inorganic Chemistry named after M.F.Nagiyev, NAS of Azerbaijan 113, H. Javidave Ave., Baku, Az1143, Azerbaijan 2 Adiyaman State University, Altınşehir Mahallesi, Atatürk Blv. No:1, 02040 Adıyaman Merkez/Adıyaman aliyevimir16@gmail.com
DOI: 
https://doi.org/10.23939/chcht13.02.236
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Keywords:

Abstract: 
The character of the interaction in the TlAs2Se3Te–TlAs2Te3Se system was studied by the methods of DTA, RFA, MSA, and also by measuring the microhardness and determining the density. State diagram of the system was constructed. It was established that the TlAs2Se3Te–TlAs2Te3Se system is partially a quasibinary section of the quaternary As, Tl//Se, Te system. One congruently melting compound TlAs2Se2Te2 is formed in the system at 548 K. Solid solutions based on TlAs2Se3Te at room temperature reach up to 10 mol % TlAs2Te3Se, and solid solutions on the basis of TlAs2Te3Se are practically not detected. All the samples obtained are vitreous.
References: 

[1] Hari P., Cheneya C., Luepkea G. et al.: J. Non-Crystal. Solid., 2000, 270, 265. https://doi.org/10.1016/S0022-3093(00)00072-7
[2] Iovu M., Shutov C., Rebeja S., Colomeyco E.: J. Optoelectron. Adv. Mater., 2000, 2, 53.
[3] Littler I., Fu L., Mägi E. et al.:J. Opt. Express, 2006, 14, 8088. https://doi.org/10.1364/OE.14.008088
[4] Hineva Т., Petkova Т.,Popov С. et al.: J. Optoelectron. Adv. Mater., 2007, 9, 326.
[5] Babaiev A., Muradov R., Sultanov S., Askhabov A.: Neorg. Materialy, 2008, 44, 1319.
[6] Aliyev I., Ahmedova C., Farzaliyev A.: Chem. Chem. Technol., 2017, 11, 138. https://doi.org/10.23939/chcht11.02.138
[7] Aliyev I., Babanly M., Farzaliev A.: XI Int. Conf. on the Physics and Technology of Thin Films. Ukraine, Ivano-Frankivsk, 7-12 May 2007, 86.
[8] Aliyev I., Aliyev I.G., Farzaliev A., Veliev D.: Rus. J. Inorg. Chem., 2008, 53, 962. https://doi.org/10.1134/S00.6023608060259
[9] Veliev D., Aliyev I., Mamedova A.: Zh. Neorg. Khim., 2007, 52, 312.
[10] Farzaliev A., Aliyev I., Aliyev O., Aliyev I.G.: Chem. Problems, 2006, 2, 269. https://doi.org/10.1134/S0036023607020234
[11] Vorobyev Yu., Velikova N., Kirilenko V., Shchelkov R.: Neorg. Materialy, 1987, 23, 1110.
[12] Aliyev I.: Doct. thesis. Physicochemical basis for obtaining new materials in chalcogenide systems of arsenic with indium and thallium chalcogenides. Baku 1992.