Modeling of Chemical Surface Deposition (CSD) of CdS and CdSe Semiconductor Thin Films

Ruslana Guminilovych, Pavlo Shapoval, Iosyp Yatchyshyn and Stepan Shapoval
Affiliation: 
Lviv Polytechnic National University, 12, S. Bandera str., 79013 Lviv, Ukraine; guminilovych@gmail.com
DOI: 
https://doi.org/10.23939/chcht09.03.287
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Abstract: 
A mathematical model of the chemical surface deposition process of CdS and CdSe thin films, which allows determining the concentration of reagents, as well as duration and temperature for CSD needed to obtain films of the set thickness was designed. The adequacy of model was tested by Fisher's criterion. The nomogram of dependence of cadmium ions content on the initial deposition parameters was built according to the results of experimental studies and approximated by mathematical dependence.
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